CY7C1049CV33-10VXAT Cypress Semiconductor Corp, CY7C1049CV33-10VXAT Datasheet - Page 5

• Manufacturer Part Number: CY7C1049CV33-10VXAT
• Description: CY7C1049CV33-10VXAT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1049CV33-10VXAT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (512K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 36-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

CY7C1049CV33
[4]
Figure 2. AC Test Loads and Waveforms
12-, 15-ns devices:
10-ns devices:
R 317
Z = 50
3.3 V
OUTPUT
OUTPUT
50
30 pF*
R2
30 pF
* CAPACITIVE LOAD CONSISTS
351
1.5 V
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
(a)
(b)
High Z characteristics:
R 317
ALL INPUT PULSES
3.3 V
3.0 V
90%
90%
OUTPUT
10%
10%
R2
5 pF
GND
351
(c)
(d)
Fall Time: 1 V/ns
Rise Time: 1 V/ns
Note
4. AC characteristics (except High Z) for 10 ns parts are tested using the load conditions shown in
Figure 2
(a). All other speeds are tested using the Thevenin load
shown in
Figure 2
(b). High Z characteristics are tested for all speeds using the test load shown in
Figure 2
(d).
Document #: 38-05006 Rev. *K
Page 5 of 13
[+] Feedback