CY7C1049CV33-10VXAT Cypress Semiconductor Corp, CY7C1049CV33-10VXAT Datasheet - Page 7

• Manufacturer Part Number: CY7C1049CV33-10VXAT
• Description: CY7C1049CV33-10VXAT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1049CV33-10VXAT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (512K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 36-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Waveforms
Notes
Document #: 38-05006 Rev. *K
11. Device is continuously selected. OE, CE = V
12. WE is HIGH for read cycles.
13. Address valid before or similar to CE transition LOW.
14. Data I/O is high impedance if OE = V
15. If CE goes HIGH simultaneously with WE HIGH, the output remains in high impedance state.
16. During this period, the I/Os are in output state. Do not apply input signals.
DATA OUT
CURRENT
ADDRESS
DATA OUT
ADDRESS
ADDRESS
DATA I/O
SUPPLY
V
CE
OE
WE
OE
CC
CE
NOTE 16
PREVIOUS DATA VALID
HIGH IMPEDANCE
Figure 5. Write Cycle No. 1 (WE Controlled, OE HIGH During Write)
t
PU
Figure 3. Read Cycle No. 1 (Address Transition Controlled)
IH
.
t
t
SA
LZCE
t
HZOE
IL
t
.
t
Figure 4. Read Cycle No. 2 (OE Controlled)
ACE
LZOE
t
OHA
50%
t
DOE
t
AA
t
AW
t
SCE
t
RC
t
WC
t
RC
RC
t
t
PWE
DATA VALID
SD
DATA VALID
[12, 13]
[11, 12]
t
DATA VALID
HA
t
HZOE
t
[14, 15]
HD
t
HZCE
CY7C1049CV33
t
PD
50%
IMPEDANCE
HIGH
Page 7 of 13
I
I
CC
SB
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