CY7C1381D-133AXC Cypress Semiconductor Corp, CY7C1381D-133AXC Datasheet - Page 23
CY7C1381D-133AXC
Manufacturer Part Number
CY7C1381D-133AXC
Description
IC,SYNC SRAM,512KX36,CMOS,QFP,100PIN,PLASTIC
Manufacturer
Cypress Semiconductor Corp
Datasheets
1.CY7C1381D-133AXC.pdf
(29 pages)
2.CY7C1381D-133AXC.pdf
(29 pages)
3.CY7C1381D-133AXC.pdf
(29 pages)
4.CY7C1381F-133BGCT.pdf
(17 pages)
Specifications of CY7C1381D-133AXC
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
18M (512K x 36)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1381D-133AXC
Manufacturer:
CYPRESS
Quantity:
101
Company:
Part Number:
CY7C1381D-133AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Company:
Part Number:
CY7C1381D-133AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Document #: 38-05544 Rev. *A
Timing Diagrams
3
Notes:
23. Timing reference level is 1.5V when V
24. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
Write Cycle Timing
Data Out (Q)
Data in (D)
ADDRESS
BWE,
BW
ADSP
ADSC
GW
ADV
CE
CLK
OE
X
BURST READ
High-Z
t ADS
t CES
t AS
[25, 26]
A1
(continued)
t ADH
t CEH
t
t AH
t
CH
OEHZ
Byte write signals are ignored for first cycle when
ADSP initiates burst
t CYC
t ADS
t
Single WRITE
CL
t
DS
D(A1)
t ADH
t
DH
DDQ
= 3.3V and is 1.25V when V
A2
D(A2)
DON’T CARE
PRELIMINARY
D(A2 + 1)
t
WES
BURST WRITE
t
WEH
DDQ
= 2.5V.
D(A2 + 1)
UNDEFINED
ADV suspends burst
D(A2 + 2)
ADSC extends burst
D(A2 + 3)
t ADS
A3
D(A3)
t ADH
t ADVS
Extended BURST WRITE
t WES
D(A3 + 1)
t ADVH
t WEH
D(A3 + 2)
CY7C1381D
CY7C1383D
Page 23 of 29