CY7C1480BV33-200AXC Cypress Semiconductor Corp, CY7C1480BV33-200AXC Datasheet - Page 22

• Manufacturer Part Number: CY7C1480BV33-200AXC
• Description: CY7C1480BV33-200AXC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1480BV33-200AXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................ –65 C to +150 C
Ambient Temperature with
Power Applied .......................................... –55 C to +125 C
Supply Voltage on V
Supply Voltage on V
DC Voltage Applied to Outputs
in Tri-State .........................................–0.5 V to V
DC Input Voltage ................................. –0.5 V to V
Electrical Characteristics
Over the Operating Range
Document Number: 001-15145 Rev. *E
Notes
V
V
V
V
V
V
I
I
I
I
Parameter
X
OZ
DD
SB1
11. Overshoot: V
12. Power up: Assumes a linear ramp from 0V to V
13. The operation current is calculated with 50% read cycle and 50% write cycle.
DD
DDQ
OH
OL
IH
IL
[13]
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
except ZZ and MODE
Input Current of MODE
Input Current of ZZ
Output Leakage Current
V
Current
Automatic CE Power Down
Current—TTL Inputs
IH
DD
(AC) < V
Operating Supply
DD
DDQ
Description
DD
Relative to GND ......–0.3 V to +4.6 V
+1.5V (Pulse width less than t
Relative to GND ..... –0.3 V to +V
[11, 12]
[11]
[11]
DD
(min.) within 200 ms. During this time V
For 3.3 V IO
For 2.5 V IO
For 3.3 V IO, I
For 2.5 V IO, I
For 3.3 V IO, I
For 2.5 V IO, I
For 3.3 V IO
For 2.5 V IO
For 3.3 V IO
For 2.5 V IO
GND  V
Input = V
Input = V
Input = V
Input = V
GND  V
V
f = f
V
V
f = f
DD
DD
IN
MAX
MAX
 V
= Max., I
= Max, Device Deselected,
CYC
DDQ
DD
IH
/2). Undershoot: V
= 1/t
= 1/t
I
I
SS
DD
SS
DD
or V
+ 0.5 V
+ 0.5 V
 V
 V
CYC
CYC
OUT
DDQ
DDQ,
IN
OH
OH
OL
OL
DD
 V
= 8.0 mA
= 1.0 mA
= –4.0 mA
= –1.0 mA
= 0 mA,
Output Disabled
IL
Test Conditions
IL
(AC) > –2V (Pulse width less than t
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage......................................... > 2001 V
(MIL-STD-883, Method 3015)
Latch up Current.................................................... > 200 mA
Operating Range
Commercial
Industrial
Range
IH
< V
CY7C1482BV33, CY7C1486BV33
DD
and V
4.0 ns cycle, 250 MHz
5.0 ns cycle, 200 MHz
6.0 ns cycle, 167 MHz
4.0 ns cycle, 250 MHz
5.0 ns cycle, 200 MHz
6.0 ns cycle, 167 MHz
–40 C to +85 C
0 C to +70 C
DDQ
Temperature
Ambient
< V
DD
.
CYC
/2).
3.3 V– 5% /
CY7C1480BV33
3.135
3.135
2.375
–0.3
–0.3
Min
–30
2.4
2.0
2.0
1.7
+ 10%
–5
–5
–5
–
–
–
–
–
–
–
–
–
–
V
DD
V
V
DD
DD
2.625
Max
V
500
500
450
245
245
245
3.6
0.4
0.4
0.8
0.7
30
Page 22 of 35
+ 0.3 V
+ 0.3 V
–
–
5
–
5
–
5
DD
2.5 V – 5%
to V
V
DDQ
DD
Unit
mA
mA
mA
mA
mA
mA
A
A
A
A
A
A
V
V
V
V
V
V
V
V
V
V
V
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