CY7C1480V33-250BZI Cypress Semiconductor Corp, CY7C1480V33-250BZI Datasheet - Page 22

• Manufacturer Part Number: CY7C1480V33-250BZI
• Description: CY7C1480V33-250BZI
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1480V33-250BZI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 72M (2M x 36)
• Speed: 250MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document #: 38-05283 Rev. *G
Switching Waveforms
Read Cycle Timing
Note:
21. On this diagram, when CE is LOW: CE
Data Out (Q)
GW, BWE,
ADDRESS
ADSP
ADSC
BWx
ADV
CLK
OE
CE
t
ADS
t AS
t CES
[21]
A1
t
ADH
t AH
t CEH
t
CH
High-Z
t CYC
t WES
t
CL
Single READ
t CLZ
t WEH
t CO
1
is LOW, CE
t ADS
A2
Q(A1)
t ADH
t OEHZ
2
t ADVS
is HIGH and CE
t ADVH
t OELZ
t OEV
Q(A2)
DON’T CARE
t DOH
3
t CO
is LOW. When CE is HIGH: CE
Q(A2 + 1)
ADV
suspends
burst.
UNDEFINED
Q(A2 + 2)
BURST READ
1
is HIGH or CE
Q(A2 + 3)
2
is LOW or CE
A3
Q(A2)
Burst continued with
new base address
Burst wraps around
to its initial state
CY7C1480V33
CY7C1482V33
CY7C1486V33
3
Q(A2 + 1)
is HIGH.
t CHZ
Deselect
cycle
Page 22 of 31
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