BFR31,235 NXP Semiconductors, BFR31,235 Datasheet - Page 6

• Manufacturer Part Number: BFR31,235
• Description: TRANS JFET N-CH 25V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR31,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 1mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Current Drain (id) - Max: 10mA
• Fet Type: N-Channel
• Voltage - Cutoff (vgs Off) @ Id: 2.5V @ 0.5nA
• Input Capacitance (ciss) @ Vds: 4pF @ 10V
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: + / - 25 V
• Gate-source Breakdown Voltage: - 25 V
• Drain Current (idss At Vgs=0): 5 mA
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
1997 Dec 05
handbook, halfpage
handbook, halfpage
N-channel field-effect transistors
BFR30.
V
Fig.7
V
Fig.9
DS
GS
I GSS
(mA)
(nA)
10
10
10
I D
= 10 V.
= 10 V; V
10
−1
−2
−3
6
4
2
0
1
25
0
Drain current as a function of junction
temperature; typical values.
Gate cut-off current as a function of junction
temperature; typical values.
DS
= 0.
50
50
100
75
100
150
V GS = 0 V
T j (°C)
T j (°C)
−0.5
−1.5
−1.0
−2.0
MDA661
MDA656
125
200
6
handbook, halfpage
handbook, halfpage
V GS(off)
BFR31.
V
I
Fig.10 Gate-source cut-off voltage as a function of
D
DS
(V)
(mA)
= 0.5 nA; V
I D
= 10 V.
Fig.8 Drain current as a function of junction
−6
−4
−2
6
4
2
0
0
25
0
drain current; typical values.
DS
temperature; typical values.
V GS =
−0.2
−0.4
−0.6
−0.8
−1.2
= 10 V; V
0 V
−1
2
50
BFR31
GS
4
= 0; T
75
j
= 25 C.
BFR30; BFR31
6
BFR30
Product specification
100
8
I DSS (mA)
T j (°C)
MDA662
MDA663
125
10