BFR31,235 NXP Semiconductors, BFR31,235 Datasheet - Page 8

• Manufacturer Part Number: BFR31,235
• Description: TRANS JFET N-CH 25V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFR31,235

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 1mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Current Drain (id) - Max: 10mA
• Fet Type: N-Channel
• Voltage - Cutoff (vgs Off) @ Id: 2.5V @ 0.5nA
• Input Capacitance (ciss) @ Vds: 4pF @ 10V
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: + / - 25 V
• Gate-source Breakdown Voltage: - 25 V
• Drain Current (idss At Vgs=0): 5 mA
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
1997 Dec 05
handbook, halfpage
handbook, full pagewidth
N-channel field-effect transistors
(nV/ Hz)
V
Fig.15 Feedback capacitance as a function of
V
(1) BFR31; I
(2) BFR30; I
DS
DS
e n
(pF)
−0.8
−0.6
−0.4
−0.2
C rs
= 10 V; f = 1 MHz; T
= 10 V; T
10
10
10
−1
10
0
1
4
3
2
10
0
gate-source voltage; typical values.
D
D
amb
= 1 mA.
= 4 mA.
−1
= 25 C.
Fig.16 Equivalent noise voltage source as a function of frequency; typical values.
amb
−2
= 25 C.
10
2
−3
−4
V GS (V)
MDA668
−5
10
3
8
10
4
10
5
BFR30; BFR31
(1)
(2)
Product specification
f (Hz)
MDA669
10
6