J108,126 NXP Semiconductors, J108,126 Datasheet - Page 4

• Manufacturer Part Number: J108,126
• Description: JFET N-CH 25V 50MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of J108,126

• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Current - Drain (idss) @ Vds (vgs=0): 80mA @ 5V
• Drain To Source Voltage (vdss): 25V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 10V @ 1µA
• Input Capacitance (ciss) @ Vds: 30pF @ 0V
• Resistance - Rds(on): 8 Ohm
• Mounting Type: Through Hole
• Power - Max: 400mW
• Configuration: Single
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: + / - 25 V
• Gate-source Cutoff Voltage: - 10 V
• Gate-source Breakdown Voltage: - 25 V
• Drain Current (idss At Vgs=0): 80 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
Note
1. Test conditions for switching times are as follows:
1996 Jul 30
handbook, halfpage
C
C
Switching times; see Fig.2
t
t
t
t
j
d
on
s
off
SYMBOL
= 25 C; unless otherwise specified.
N-channel silicon junction FETs
is
rs
V
V
V
V
DD
GSoff
GSoff
GSoff
V DD
= 1.5 V; V
= 12 V; R
= 7 V; R
= 5 V; R
input capacitance
reverse transfer capacitance
delay time
turn-on time
storage time
turn-off time
Fig.2 Switching circuit.
10 nF
GS
L
L
L
= 100
= 100
= 0 to V
= 100
PARAMETER
50
10 F
50
GSoff
(J109)
(J110).
(J108)
DUT
R L
(all types)
0.1 F
SAMPLING
SCOPE
50
MGE773
V
V
T
V
note 1
amb
DS
DS
DS
= 0; V
= 0; V
= 0; V
= 25 C
4
GS
GS
GS
CONDITIONS
= 10 V; f = 1 MHz
= 0; f = 1 MHz;
= 10 V; f = 1 MHz
15
50
8
2
4
4
6
J108; J109; J110
TYP.
Product specification
30
85
15
MAX.
pF
pF
pF
ns
ns
ns
ns
UNIT