J108,126 NXP Semiconductors, J108,126 Datasheet - Page 5

• Manufacturer Part Number: J108,126
• Description: JFET N-CH 25V 50MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of J108,126

• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Current - Drain (idss) @ Vds (vgs=0): 80mA @ 5V
• Drain To Source Voltage (vdss): 25V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 10V @ 1µA
• Input Capacitance (ciss) @ Vds: 30pF @ 0V
• Resistance - Rds(on): 8 Ohm
• Mounting Type: Through Hole
• Power - Max: 400mW
• Configuration: Single
• Mounting Style: Through Hole
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: + / - 25 V
• Gate-source Cutoff Voltage: - 10 V
• Gate-source Breakdown Voltage: - 25 V
• Drain Current (idss At Vgs=0): 80 mA
• Power Dissipation: 400 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
1996 Jul 30
handbook, full pagewidth
N-channel silicon junction FETs
V i
V o
V GS = 0 V
V GS off
10%
90%
90%
10%
Fig.3 Input and output waveforms.
t s
t off
t f
5
t d
t on
t r
MGE774
J108; J109; J110
Product specification