1PS59SB16 T/R NXP Semiconductors, 1PS59SB16 T/R Datasheet - Page 3

• Manufacturer Part Number: 1PS59SB16 T/R
• Description: Schottky (Diodes & Rectifiers) DIODE SCHOTTKY TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of 1PS59SB16 T/R

• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Common Anode
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1PS59SB16,115

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Refer to SC59 standard mounting conditions.
1996 Sep 20
Per diode
V
I
I
I
P
T
T
Per diode
V
I
t
C
R
SYMBOL
SYMBOL
SYMBOL
F
FRM
FSM
amb
R
rr
stg
j
R
tot
F
d
th j-a
Schottky barrier (double) diodes
= 25 C unless otherwise specified.
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation (per package)
storage temperature
junction temperature
forward voltage
reverse current
reverse recovery time
diode capacitance
thermal resistance from junction to ambient
PARAMETER
PARAMETER
PARAMETER
t
t
T
see Fig.6
V
when switched from I
to I
measured at I
see Fig.9
f = 1 MHz; V
note 1
3
p
p
amb
R
< 10 ms
I
I
I
I
I
F
F
F
F
F
R
= 25 V; see Fig.7
1 s;
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
= 10 mA; R
25 C
CONDITIONS
CONDITIONS
CONDITIONS
0.5
R
R
= 1 V; see Fig.8
= 1 mA;
L
= 100 ;
F
= 10 mA
1PS59SB10 series
240
320
400
500
800
2
5
10
MIN.
65
VALUE
MAX.
500
Product specification
30
200
300
600
250
+150
125
MAX.
mV
mV
mV
mV
mV
ns
pF
A
UNIT
UNIT
K/W
V
mA
mA
mA
mW
C
C
UNIT