1PS59SB16 T/R NXP Semiconductors, 1PS59SB16 T/R Datasheet - Page 4

• Manufacturer Part Number: 1PS59SB16 T/R
• Description: Schottky (Diodes & Rectifiers) DIODE SCHOTTKY TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of 1PS59SB16 T/R

• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Common Anode
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1PS59SB16,115

Philips Semiconductors
GRAPHICAL DATA
1996 Sep 20
handbook, halfpage
Schottky barrier (double) diodes
f = 1 MHz; T
(1) T
(2) T
(3) T
Fig.6
Fig.8
(mA)
I F
(pF)
C d
10
10
10
10
15
10
1
amb
amb
amb
0
5
3
2
1
0
0
(1)
= 125 C.
= 85 C.
= 25 C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
amb
(2)
= 25 C.
(3)
10
0.4
(1)
(2)
0.8
20
(3)
V
V F (V)
R
MSA891
(V)
MSA892
1.2
30
4
handbook, halfpage
I F
I R
(1) T
(2) T
(3) T
Fig.7
( A)
I R
10
10
10
10
amb
amb
amb
1
3
2
1
0
= 125 C.
= 85 C.
= 25 C.
Reverse current as a function of reverse
voltage; typical values.
Fig.9 Reverse recovery definitions.
dI
dt
F
Q
r
10
1PS59SB10 series
t f
20
Product specification
V
R
(1)
(2)
(3)
(V)
MSA893
MRC129 - 1
10%
90%
30
t