T659N26TOF Infineon Technologies, T659N26TOF Datasheet - Page 2

• Manufacturer Part Number: T659N26TOF
• Description: SCR Modules 2.6KV 13KA
• Manufacturer: Infineon Technologies

Specifications of T659N26TOF

• Rated Repetitive Off-state Voltage Vdrm: 2600 V
• Off-state Leakage Current @ Vdrm Idrm: 100 mA
• Holding Current (ih Max): 300 mA
• Mounting Style: Press Fit
• Package / Case: T-5726
• Breakover Current Ibo Max: 13000 A
• Gate Trigger Current (igt): 250 mA
• Gate Trigger Voltage (vgt): 2.2 V
• Repetitive Peak Forward Blocking Voltage: 2600 V

Elektrische Eigenschaften
Höchstzulässige Werte
Charakteristische Werte
Thermische Eigenschaften
Mechanische Eigenschaften Mechanical properties
T 659 N
repetitive peak forward off-state and
reverse voltages
non-repetitive peak forward off-state
voltage
non-repetitive peak reverse voltage
RMS on-state current
average on-state current
surge current
I
critical rate of rise of on-state current
critical rate of rise of off-state voltage
on-state voltage
threshold voltage
slope resistance
gate trigger current
gate trigger voltage
gate non-trigger current
gate non-trigger voltage
holding current
latching current
forward off-state and reverse currents
gate controlled delay time
circuit commutated turn-off time
thermal resistance, junction to case
thermal resistance, case to heatsink
max. junction temperature
operating temperature
storage temperature
clamping force
weight
creepage distance
humidity classification
vibration resistance
Electrical properties
Maximum rated values
Characteristic values
Thermal properties
2
t-value
t
t
t
t
t
t
t
t
t
DIN IEC 747-6, f= 50 Hz,
v
t
5.Kennbuchstabe/5th letter F
t
t
t
t
t
t
t
t
t
t
i
t
DIN IEC 747-6, t
di
t
v
4.Kennbuchstabe/4th letter O
Kühlfläche/cooling surface
beidseitig/two-sided,
beidseitig/two-sided, DC
Anode/anode,
Anode/anode, DC
Kathode/cathode,
Kathode/cathode, DC
Kühlfläche/cooling surface
beidseitig/two-sided
einseitig/single-sided
DIN 40040
f = 50 Hz
GM
vj
vj
vj
c
c
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
L
DRM
=t
G
= 85°C
= 56°C
=10 V, i
= -40°C...t
= -40°C...t
= +25°C...t
= 25°C, t
= t
= 25°C, t
= t
= t
= t
= t
= t
= 25 °C, v
= 25 °C, v
= t
= t
= t
= 25 °C, v
= 25 °C,v
= t
/dt=1A/µs
= 1 A, di
vj max
, dv
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max,
, i
D
, t
, t
, v
, i
, v
, v
, v
/dt=20V/µs,-di
TM
GM
v
T
p
p
D
p
p
D
D
D
D
D
=i
G
= 1 A, di
D
D
D
= 10 ms
= 10 ms
= 2850 A
vj max
vj max
= V
= 10 ms
= 10 ms
=0,67 V
= 6 V
= 0,5 V
= 0,5 V
vj max
= 6 V, R
/dt = 1 A/µs, t
TAVM
= 6 V
= 6 V
= 6 V, R
DRM
vj
=180° sin
=25°C, i
, v
, v
RM
DRM
DRM
G
=180° sin
DRM
/dt = 1 A/µs
GK
R
A
=100 V, v
= V
T
= 5
=180° sin
/dt=10A/µs,
GM
10
RRM
g
=1A,
= 20 µs
DM
=0,67
V
V
V
I
I
I
I
(di/dt)
(dv/dt)
v
V
r
I
V
I
V
I
I
i
t
t
R
R
t
t
t
F
G
TRMSM
TAVM
TSM
2
GT
GD
H
L
D
gd
q
vj max
c op
stg
T
T
DRM
DSM
RSM
T(TO)
GT
GD
, i
thJC
thCK
t
R
, V
cr
cr
RRM
max.
max.
max.
max.
max.
max.
max.
max.
2200 2400 2600 V
2200 2400 2600 V
2300 2500 2700 V
max. 1500 mA
-40...+125 °C
-40...+140 °C
max. 2,53 V
max. 0,25 V
max. 250 mA
max. 300 mA
max. 100 mA
10,5...21 kN
max. 2,2 V
max. 10 mA
typ. 280 g
typ. 300 µs
845000 A
660000 A
0,0537 °C/W
0,0511 °C/W
0,0816 °C/W
0,0732 °C/W
max. 5 mA
max. 4 µs
13000 A
11500 A
0,033 °C/W
0,005 °C/W
1500 A
1000 V/µs
0,03 °C/W
0,01 °C/W
659 A
955 A
150 A/µs
125 °C
0,5 m
25 mm
50 m/s²
1 V
C
2
2
s
s