T659N26TOF Infineon Technologies, T659N26TOF Datasheet - Page 3

• Manufacturer Part Number: T659N26TOF
• Description: SCR Modules 2.6KV 13KA
• Manufacturer: Infineon Technologies

Specifications of T659N26TOF

• Rated Repetitive Off-state Voltage Vdrm: 2600 V
• Off-state Leakage Current @ Vdrm Idrm: 100 mA
• Holding Current (ih Max): 300 mA
• Mounting Style: Press Fit
• Package / Case: T-5726
• Breakover Current Ibo Max: 13000 A
• Gate Trigger Current (igt): 250 mA
• Gate Trigger Voltage (vgt): 2.2 V
• Repetitive Peak Forward Blocking Voltage: 2600 V

i
[A]
t
[µs]
T
gd
4000
3500
3000
2500
2000
1500
1000
500
10
10
10
10
10
0
10
7
4
2
7
4
2
7
4
2
7
4
2
-1
0,5
3
2
1
0
T 659 N / 1
Bild / Fig. 1
Grenzdurchlaßkennlinie / Limiting on-state characteristic
i
t
Bild / Fig. 3
Zündverzug / Gate controlled delay time t
t
a - maximaler Verlauf / Limiting characteristic
b - typischer Verlauf / typical characteristic
T
-1
vj
vj
= f(v
= 125 °C
= 25°C, di
T
2
)
3
1
G
/dt = i
4 5
GM
7
/1µs
10
1,5
0
2
3
2
4 5
gd
= f(i
7
GM
10
2,5
)
1
2
a
b
v
i
G
T
[A]
[V]
3
3
4 5
7
10
3,5
2
Q
[µAs]
Analytische Elemente des transienten Wärmewiderstandes Z
Analytical elements of transient thermal impedance Z
Beidseitig / Two-sided
Anodenseitig / Anode-sided
Kathodenseitig / Cathode-sided
Analytische Funktion / Analytical function:
Z
R
R
R
thJC
r
n
n
n
thn
thn
thn
10
10
10
[s]
[s]
[s]
Pos. n
Pos. n
Pos. n
[°C/W]
[°C/W]
[°C/W]
4
3
2
10
7
5
4
3
2
7
5
4
3
2
=
T 659 N / 2
Bild / Fig. 2
Sperrverzögerungsladung / Recovered Q
t
Parameter: Durchlaßstrom / On-state current i
n
vj
n=1
0
max
= t
vj max,
R
thn
0,000134 0,001636 0,00195
0,000183 0,00166
0,000455 0,003885 0,00331
0,000251 0,00243
0,000708 0,007242 0,0137
0,00032
(1-e
2
v
1
1
1
R
-
= f(v
t
n
3
)
0,00387
T
)
4
2
2
2
0,5 V
5
RRM
0,0544
0,0232
0,00937
7
= 0,8 V
3
3
3
10
1
r
RRM
0,00968
0,119
0,0138
0,183
0,02665
0,138
= f(-di/dt)
thJC
TM
4
4
4
2
per arm for DC
-di/dt [A/µs]
0,01680
0,939
0,02965
1,14
0,0249
0,9
thJC
3
5
5
5
pro Zweig für DC
4
5
6
6
6
7
10
2