UMP11NTN Rohm Semiconductor, UMP11NTN Datasheet

DIODE SW 80V 100MA SOT-363 TR

UMP11NTN

Manufacturer Part Number
UMP11NTN
Description
DIODE SW 80V 100MA SOT-363 TR
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of UMP11NTN

Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 70V
Current - Average Rectified (io) (per Diode)
100mA
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Pair Common Anode
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Product
Switching Diodes
Peak Reverse Voltage
80 V
Forward Continuous Current
100 mA
Max Surge Current
4 A
Configuration
Double Dual Common Anode
Recovery Time
4 ns
Forward Voltage Drop
1.2 V
Maximum Reverse Leakage Current
0.1 uA
Maximum Power Dissipation
150 mW
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UMP11NTN
Manufacturer:
DS
Quantity:
216
Diodes
Switching diode
UMP11N
Ultra high speed switching
1) Small mold type. (UMD6)
2) High reliability
Silicon epitaxial planar
Forw
R
C
Reverse recovery time
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current (Single)
Average retcified forward current
Surge current (t=1us)
Power dissipation
Junction temperature
Storage temperature
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
everse current
apacitance between terminals
ard voltage
Parameter
Parameter
Symbol
Symbol
I
Tstg
V
I
surge
V
Ct
trr
V
Pd
I
Io
Tj
FM
R
RM
F
External dimensions (Unit : mm)
Taping specifications (Unit : mm)
R
2.2±0.1
4.0±0.1
0.25±
(6)
(1)
0.65
0.1
0.05
2.0±0.2
1.3±0.1
Min.
各リードとも
Each lead has same dimension
2.0±0.05
-
-
-
-
(5)
(2)
同寸法
0.65
-55 to +150
Limits
300
100
150
150
Typ.
(3)
80
80
(4)
4
4.0±0.1
-
-
-
-
dot (year week factory)
JEITA : SC-88
φ1.5±0.1
      0
JEDEC : SOT-363
ROHM : UMD6
Max.
1.2
0.1
3.5
4
0.15±0.05
0.9±0.1
0.7
Unit
Unit
mW
φ1.1±0.1
mA
mA
µA
0~0.1
pF
ns
V
V
V
A
I
V
V
V
Land size figure (Unit : mm)
Structure
UMD6
F
=100mA
R
R
R
=70V
=6V , f=1MHz
=6V , IF=5mA , RL=50Ω
0.65
0.35
Conditions
0.65
Rev.B
UMP11N
0.3±0.1
1.15±0.1
1/2

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UMP11NTN Summary of contents

Page 1

Diodes Switching diode UMP11N Applications Ultra high speed switching Features 1) Small mold type. (UMD6) 2) High reliability Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current (Single) Average retcified forward ...

Page 2

Diodes Electrical characteristic curves (Ta=25°C) 100 Ta=75℃ Ta=125℃ Ta=25℃ 10 Ta=150℃ Ta=-25℃ 1 0.1 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 900 Ta=25℃ IF=100mA 890 n=30pcs 880 870 860 AVE:870.1mV 850 VF ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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