UMP11NTN Rohm Semiconductor, UMP11NTN Datasheet - Page 2

• Manufacturer Part Number: UMP11NTN
• Description: DIODE SW 80V 100MA SOT-363 TR
• Manufacturer: Rohm Semiconductor

Specifications of UMP11NTN

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 70V
• Current - Average Rectified (io) (per Diode): 100mA
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Pair Common Anode
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Product: Switching Diodes
• Peak Reverse Voltage: 80 V
• Forward Continuous Current: 100 mA
• Max Surge Current: 4 A
• Configuration: Double Dual Common Anode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.2 V
• Maximum Reverse Leakage Current: 0.1 uA
• Maximum Power Dissipation: 150 mW
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Diodes
Electrical characteristic curves (Ta=25°C)
100
900
890
880
870
860
850
100
0.1
10
20
15
10
10
1
5
0
1
0.1
0
100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE：VF(mV)
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
Ta=150℃
VF DISPERSION MAP
IFSM DISRESION MAP
1
AVE:870.1mV
Ta=125℃
AVE:2.50A
TIME:t(ms)
Ta=75℃
Ifsm
Ifsm
10
8.3ms
IF=100mA
Ta=25℃
n=30pcs
Ta=-25℃
t
1cyc
Ta=25℃
100
10000
0.001
1000
1000
0.01
100
100
100
0.1
90
80
70
60
50
40
30
20
10
10
10
10
1
0
9
8
7
6
5
4
3
2
1
0
0.001
0
10
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Rth-t CHARACTERISTICS
20
trr DISPERSION MAP
IR DISPERSION MAP
0.1
AVE:4.310nA
30
TIME:t(ms)
Mounted on epoxy board
IM=1mA
AVE:1.93ns
1ms
40
300us
Ta=150℃
time
50
10
IF=10mA
60
Ta=25℃
n=10pcs
VR=70V
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
Ta=-25℃
Rth(j-a)
Rth(j-c)
Ta=75℃
Ta=125℃
Ta=25℃
70
1000
80
0.1
10
10
10
1
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
1
IFSM-CYCLE CHARACTERISTICS
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
AVE:1.47kV
C=200pF
R=0Ω
ESD DISPERSION MAP
5
Ct DISPERSION MAP
NUMBER OF CYCLES
AVE:2.850pF
Ifsm
Rev.B
10
10
8.3ms
UMP11N
AVE:2.98kV
C=100pF
R=1.5kΩ
1cyc
f=1MHz
15
8.3ms
Ta=25℃
VR=0V
f=1MHz
n=10pcs
100
20
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