BAS16DXV6T1G ON Semiconductor, BAS16DXV6T1G Datasheet - Page 2

• Manufacturer Part Number: BAS16DXV6T1G
• Description: DIODE SWITCH DUAL 75V SOT563
• Manufacturer: ON Semiconductor

Specifications of BAS16DXV6T1G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 75V
• Reverse Recovery Time (trr): 6ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 2 Independent
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Product: Switching Diodes
• Peak Reverse Voltage: 75 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.5 A
• Configuration: Dual Parallel
• Recovery Time: 6 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 1 uA
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Forward Voltage Vf Max: 1V
• Reverse Recovery Time Trr Max: 6ns
• Forward Surge Current Ifsm Max: 500mA
• Diode Case Style: SOT-563
• No. Of Pins: 2
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAS16DXV6T1GOSTR

ELECTRICAL CHARACTERISTICS
Forward Voltage
Reverse Current
Capacitance
Reverse Recovery Time
Stored Charge
Forward Recovery Voltage
(I
(I
(I
(I
(V
(V
(V
(V
(I
(I
(I
F
F
F
F
F
F
F
R
R
R
R
= 1.0 mA)
= 10 mA)
= 50 mA)
= 150 mA)
= I
= 10 mA to V
= 10 mA, t
= 75 V)
= 75 V, T
= 25 V, T
= 0, f = 1.0 MHz)
R
= 10 mA, R
J
J
r
= 150°C)
= 150°C)
= 20 ns) (Figure 3)
R
= 6.0 V, R
L
= 50 W) (Figure 1)
Characteristic
L
= 500 W) (Figure 2)
(T
A
BAS16DXV6T1, BAS16DXV6T5
= 25°C unless otherwise noted)
http://onsemi.com
2
Symbol
V
QS
C
V
I
t
FR
R
rr
F
D
Min
−
−
−
−
−
−
−
−
−
−
−
1000
1250
Max
1.75
715
855
1.0
2.0
6.0
50
30
45
Unit
mV
PC
mA
pF
ns
V