BAS16DXV6T1G ON Semiconductor, BAS16DXV6T1G Datasheet - Page 3

DIODE SWITCH DUAL 75V SOT563

BAS16DXV6T1G

Manufacturer Part Number
BAS16DXV6T1G
Description
DIODE SWITCH DUAL 75V SOT563
Manufacturer
ON Semiconductor
Datasheet

Specifications of BAS16DXV6T1G

Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
1µA @ 75V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
75V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Independent
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Product
Switching Diodes
Peak Reverse Voltage
75 V
Forward Continuous Current
0.2 A
Max Surge Current
0.5 A
Configuration
Dual Parallel
Recovery Time
6 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
1 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
6ns
Forward Surge Current Ifsm Max
500mA
Diode Case Style
SOT-563
No. Of Pins
2
Leaded Process Compatible
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS16DXV6T1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS16DXV6T1G
Manufacturer:
ON Semiconductor
Quantity:
34 442
Part Number:
BAS16DXV6T1G
Manufacturer:
ON Semiconductor
Quantity:
900
Part Number:
BAS16DXV6T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BAS16DXV6T1G
Manufacturer:
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Quantity:
20 000
V
V
V
F
f
10%
10%
10%
90%
90%
90%
2 ns MAX
1 ns MAX
20 ns MAX
100 ns
400 ns
120 ns
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
Figure 1. Reverse Recovery Time Equivalent Test Circuit
Figure 2. Stored Charge Equivalent Test Circuit
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500 W
1 KW
DUT
DUTY CYCLE = 2%
500 W
D1
DUT
BAW62
DUTY CYCLE = 2%
DUTY CYCLE = 2%
243 pF
DUT
450 W
OSCILLOSCOPE
R . 10 MW
C 3 7 pF
50 W
100 KW
50 W

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