BT149D NXP Semiconductors, BT149D Datasheet - Page 5

• Manufacturer Part Number: BT149D
• Description: SCRs BULK SCR
• Manufacturer: NXP Semiconductors

Specifications of BT149D

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.35 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT149D,112

Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 13508
Product data sheet
Symbol
R
R
Fig 6. Transient thermal impedance as a function of pulse width.
th(j-lead)
th(j-a)
Z
th(j-lead)
(K/W)
10
10
10
10
1
2
1
2
10
Parameter
thermal resistance from junction to
lead
thermal resistance from junction to
ambient
5
Thermal characteristics
10
4
10
3
Conditions
printed-circuit board
mounted; lead length = 4 mm
Rev. 04 — 20 August 2004
10
2
10
1
Min
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT149 series
P
1
Typ
-
150
t
Thyristors logic level
p
T
t
p
(s)
001aab451
Max
60
-
=
t
T
t
p
10
Unit
K/W
K/W
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