BTA201W-600E T/R NXP Semiconductors, BTA201W-600E T/R Datasheet - Page 11

• Manufacturer Part Number: BTA201W-600E T/R
• Description: Triacs THYR AND TRIACS TAPE 7
• Manufacturer: NXP Semiconductors

Specifications of BTA201W-600E T/R

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 13.7 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 12 mA
• Forward Voltage Drop: 1.5 V @ 1.4 A
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA201W-600E,115

NXP Semiconductors
10. Revision history
Table 7.
BTA201W_SER_3
Product data sheet
Document ID
BTA201W_SER_E_3
Modifications:
BTA201W_SER_E_2
Modifications:
BTA201W_SER_E_1
Revision history
Release date
20080313
20070917
20060207
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Section 1.4 “Quick reference data” on page
Table 3 “Limiting values” on page
Table 5 “Static characteristics” on page
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Descriptive titles have been corrected.
Table 3 “Limiting values” on page 2: dI
Table 6 “Dynamic characteristics” on page 7: dV
Figure “Critical rate of rise of off-state voltage as a function of junction temperature;
minimum values” on page 8: graph updated
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Rev. 03 — 13 March 2008
2: I
2
t condition, t
T
1 A Three-quadrant triacs high commutation
/dt uprated
6: Minimum I
1: Updated with minimum I
Change notice
-
-
-
BTA201W series E
D
/dt uprated
p
; symbol update.
G
values added.
Supersedes
BTA201W_SER_E_2
BTA201W_SER_E_1
-
GT
© NXP B.V. 2008. All rights reserved.
values added.
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