BTA201W-600E T/R NXP Semiconductors, BTA201W-600E T/R Datasheet - Page 4

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BTA201W-600E T/R

Manufacturer Part Number
BTA201W-600E T/R
Description
Triacs THYR AND TRIACS TAPE 7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BTA201W-600E T/R

Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
13.7 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
10 mA
Holding Current (ih Max)
12 mA
Forward Voltage Drop
1.5 V @ 1.4 A
Mounting Style
SMD/SMT
Package / Case
SC-73
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTA201W-600E,115
NXP Semiconductors
BTA201W_SER_3
Product data sheet
Fig 3.
Fig 4.
I
T(RMS)
I
TSM
(A)
(A)
(1) dI
10
10
10
6
4
2
0
3
2
10
10
t
Non-repetitive peak on-state current as a function of pulse width; maximum values
f = 50 Hz; T
RMS on-state current as a function of surge
duration; maximum values
p
5
2
T
/dt limit
20 ms
sp
10
= 106 C
1
10
1
4
surge duration (s)
(1)
001aag963
10
Rev. 03 — 13 March 2008
10
3
Fig 5.
I
T(RMS)
(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
1 A Three-quadrant triacs high commutation
50
RMS on-state current as a function of solder
point temperature; maximum values
BTA201W series E
0
10
2
50
I
T
T
j(init)
t
p
(s)
100
= 25 C max
T
© NXP B.V. 2008. All rights reserved.
T
001aag958
001aag964
sp
I
( C)
TSM
t
10
150
1
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