BAV99W,115 NXP Semiconductors, BAV99W,115 Datasheet

DIODE SW DBL 75V 150MA HS SOT323

BAV99W,115

Manufacturer Part Number
BAV99W,115
Description
DIODE SW DBL 75V 150MA HS SOT323
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BAV99W,115

Package / Case
SC-70-3, SOT-323-3
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
500nA @ 80V
Current - Average Rectified (io) (per Diode)
130mA (DC)
Voltage - Dc Reverse (vr) (max)
100V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.15 A
Max Surge Current
4 A
Configuration
Dual Series
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1625-2
934026010115
BAV99W T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAV99W,115
Manufacturer:
NXP Semiconductors
Quantity:
14 400
Part Number:
BAV99W,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product specification
Supersedes data of 1996 Sep 17
book, halfpage
DATA SHEET
BAV99W
High-speed double diode
DISCRETE SEMICONDUCTORS
M3D102
1999 May 11

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BAV99W,115 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage BAV99W High-speed double diode Product specification Supersedes data of 1996 Sep 17 M3D102 1999 May 11 ...

Page 2

Philips Semiconductors High-speed double diode FEATURES Very small plastic SMD package High switching speed: max Continuous reverse voltage: max Repetitive peak reverse voltage: max Repetitive peak forward current: max. 500 mA. APPLICATIONS High-speed switching ...

Page 3

Philips Semiconductors High-speed double diode ELECTRICAL CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER Per diode V forward voltage F I reverse current R C diode capacitance d t reverse recovery time rr V forward recovery voltage ...

Page 4

Philips Semiconductors High-speed double diode GRAPHICAL DATA 200 single diode loaded I F (mA) double diode loaded 100 0 0 100 Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. ...

Page 5

Philips Semiconductors High-speed double diode (nA max typ typ 10 0 100 Fig.5 Reverse current as a function of junction temperature. ...

Page 6

Philips Semiconductors High-speed double diode handbook, full pagewidth D.U. ( mA. R Fig.7 Reverse recovery voltage test circuit and waveforms ...

Page 7

Philips Semiconductors High-speed double diode PACKAGE OUTLINE Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.4 0.25 mm 0.1 0.8 0.3 0.10 OUTLINE ...

Page 8

Philips Semiconductors High-speed double diode DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data ...

Page 9

Philips Semiconductors High-speed double diode 1999 May 11 NOTES 9 Product specification BAV99W ...

Page 10

Philips Semiconductors High-speed double diode 1999 May 11 NOTES 10 Product specification BAV99W ...

Page 11

Philips Semiconductors High-speed double diode 1999 May 11 NOTES 11 Product specification BAV99W ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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