BAV99W,115 NXP Semiconductors, BAV99W,115 Datasheet - Page 2

DIODE SW DBL 75V 150MA HS SOT323

BAV99W,115

Manufacturer Part Number
BAV99W,115
Description
DIODE SW DBL 75V 150MA HS SOT323
Manufacturer
NXP Semiconductors
Datasheets

Specifications of BAV99W,115

Package / Case
SC-70-3, SOT-323-3
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
500nA @ 80V
Current - Average Rectified (io) (per Diode)
130mA (DC)
Voltage - Dc Reverse (vr) (max)
100V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.15 A
Max Surge Current
4 A
Configuration
Dual Series
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-1625-2
934026010115
BAV99W T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAV99W,115
Manufacturer:
NXP Semiconductors
Quantity:
14 400
Part Number:
BAV99W,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Philips Semiconductors
FEATURES
APPLICATIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 11
Per diode
V
V
I
I
I
P
T
T
F
FRM
FSM
SYMBOL
stg
j
Very small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
High-speed switching in e.g.
surface mounted circuits.
RRM
R
tot
High-speed double diode
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
storage temperature
junction temperature
PARAMETER
DESCRIPTION
The BAV99W consists of two
high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the very small SOT323 plastic SMD
package.
Marking code: A7.
single diode loaded; note 1;
see Fig.2
double diode loaded; note 1;
see Fig.2
square wave; T
surge; see Fig.4
T
amb
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
t = 1 s
t = 1 ms
t = 1 s
= 25 C; note 1
Top view
2
CONDITIONS
2
j
= 25 C prior to
3
1
PINNING
2
PIN
1
2
3
65
MIN.
3
Product specification
anode
cathode
common connection
MAM094
85
75
150
130
500
4
1
0.5
200
+150
150
DESCRIPTION
MAX.
1
BAV99W
V
V
mA
mA
mA
A
A
A
mW
C
C
UNIT

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