BT151-800R NXP Semiconductors, BT151-800R Datasheet - Page 4

• Manufacturer Part Number: BT151-800R
• Description: SCRs RAIL SCR
• Manufacturer: NXP Semiconductors

Specifications of BT151-800R

• Breakover Current Ibo Max: 110 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT151-800R,127

NXP Semiconductors
BT151_SER_L_R_4
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
I
TSM
(A)
(A)
10
10
10
25
20
15
10
5
0
3
2
10
10
t
f = 50 Hz; T
duration; maximum values
p
5
2
10 ms
mb
10
dl
109 C
1
T
/dt limit
1
surge duration (s)
10
001aaa954
4
Rev. 04 — 23 October 2006
10
Fig 5. RMS on-state current as a function of mounting
I
T(RMS)
(A)
16
12
8
4
0
base temperature; maximum values
50
BT151 series L and R
10
3
0
50
t
T
p
I
T
j
(s)
initial = 25 C max
t
p
100
© NXP B.V. 2006. All rights reserved.
T
001aaa956
001aaa999
mb
I
TSM
( C)
t
10
150
Thyristors
2
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