BT151-800R NXP Semiconductors, BT151-800R Datasheet - Page 5

• Manufacturer Part Number: BT151-800R
• Description: SCRs RAIL SCR
• Manufacturer: NXP Semiconductors

Specifications of BT151-800R

• Breakover Current Ibo Max: 110 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 20 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT151-800R,127

NXP Semiconductors
5. Thermal characteristics
Table 4.
BT151_SER_L_R_4
Product data sheet
Symbol
R
R
Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width
th(j-mb)
th(j-a)
Z
th(j-mb)
(K/W)
10
10
10
10
1
1
2
3
10
5
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
4
10
3
Rev. 04 — 23 October 2006
Conditions
see
in free air
Figure 6
10
2
BT151 series L and R
10
1
Min
-
-
P
1
Typ
-
60
t
p
T
t
p
© NXP B.V. 2006. All rights reserved.
(s)
001aaa962
Max
1.3
-
=
t
T
t
p
Thyristors
10
Unit
K/W
K/W
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