BT168G NXP Semiconductors, BT168G Datasheet - Page 2
![SCRs BULK MOSFET](/photos/16/4/160465/to3_sml.jpg)
BT168G
Manufacturer Part Number
BT168G
Description
SCRs BULK MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BT168G112.pdf
(12 pages)
Specifications of BT168G
Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Package / Case
SOT-54
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT168G,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BT168G
Manufacturer:
PHILIPS
Quantity:
1 000
Company:
Part Number:
BT168GW
Manufacturer:
TI
Quantity:
36 000
Part Number:
BT168GW
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BT168GW,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BT168GW115
Manufacturer:
NXP Semiconductors
Quantity:
99 655
Part Number:
BT168GWF
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
9397 750 13511
Product data sheet
Type number
BT168E
BT168G
Symbol
V
I
I
I
I
dI
I
V
V
P
P
T
T
T(AV)
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
RGM
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/ s.
, V
RRM
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
average on-state current
RMS on-state current
non-repetitive peak on-state current
I
repetitive rate of rise of on-state
current after triggering
peak gate current
peak gate voltage
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
BT168E
BT168G
Package
Name
-
Description
plastic single-ended leaded (through hole) package; 3 leads
Rev. 04 — 20 August 2004
Conditions
half sine wave;
T
see
all conduction angles;
see
half sine wave;
T
surge;
see
t = 10 ms
I
dI
over any 20 ms period
TM
lead
j
G
t = 10 ms
t = 8.3 ms
= 25 C prior to
/dt = 100 mA/ s
= 2 A; I
Figure 1
Figure 4
Figure 2
Thyristors logic level for RCD/GFI/LCCB applications
83 C;
G
= 10 mA;
and
and
5
3
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT168 series
Max
500
600
0.5
0.8
8
9
0.32
50
1
5
5
2
0.1
+150
125
Version
SOT54
Unit
V
V
A
A
A
A
A
A/ s
A
V
V
W
W
C
C
2
s
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