BT168G NXP Semiconductors, BT168G Datasheet - Page 3
![SCRs BULK MOSFET](/photos/16/4/160465/to3_sml.jpg)
BT168G
Manufacturer Part Number
BT168G
Description
SCRs BULK MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BT168G112.pdf
(12 pages)
Specifications of BT168G
Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Package / Case
SOT-54
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT168G,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BT168G
Manufacturer:
PHILIPS
Quantity:
1 000
Company:
Part Number:
BT168GW
Manufacturer:
TI
Quantity:
36 000
Part Number:
BT168GW
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BT168GW,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
BT168GW115
Manufacturer:
NXP Semiconductors
Quantity:
99 655
Part Number:
BT168GWF
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
9397 750 13511
Product data sheet
Fig 1. Total power dissipation as a function of average on-state current; maximum values.
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
I
P
(W)
TSM
(A)
tot
0.8
0.6
0.4
0.2
10
0
8
6
4
2
0
a = form factor = I
f = 50 Hz.
values.
0
1
T(RMS)
0.1
/I
T(AV)
.
4
0.2
10
Rev. 04 — 20 August 2004
2.8
0.3
Thyristors logic level for RCD/GFI/LCCB applications
2.2
10
0.4
2
conduction
(degrees)
1.9
angle
120
180
30
60
90
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
factor
form
1.57
2.8
2.2
1.9
a
4
BT168 series
0.5
T
I
n
T
j
initial = 25 C max
a =
1.57
t
I
p
T(AV)
001aab446
001aab499
(A)
I
TSM
t
10
0.6
3
77
89
101
113
125
T
( C)
c(max)
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