BFP 405 H6433 Infineon Technologies, BFP 405 H6433 Datasheet - Page 2
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BFP 405 H6433
Manufacturer Part Number
BFP 405 H6433
Description
RF Bipolar Small Signal RF BIP TRANSISTORS
Manufacturer
Infineon Technologies
Datasheet
1.BFP_405_H6433.pdf
(9 pages)
Specifications of BFP 405 H6433
Dc Collector/base Gain Hfe Min
60
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
NPN
Maximum Operating Frequency
25 GHz
Collector- Emitter Voltage Vceo Max
4.5 V
Emitter- Base Voltage Vebo
1.5 V
Continuous Collector Current
25 mA
Power Dissipation
75 mW
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-343
Other names
BFP405H6433XT
Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
C
C
For calculation of R
CE
CB
EB
= 1 mA, I
= 5 mA, V
= 0.5 V, I
= 15 V, V
= 5 V, I
B
E
CE
= 0
C
= 0
BE
= 0
= 4 V, pulse measured
thJA
= 0
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
R
CES
CBO
EBO
FE
(BR)CEO
thJS
min.
4.5
60
-
-
-
Values
Value
≤ 555
typ.
95
5
-
-
-
max.
2009-11-06
100
130
10
1
-
BFP405
Unit
V
µA
nA
µA
-
Unit
K/W