BFP 405 H6433 Infineon Technologies, BFP 405 H6433 Datasheet - Page 2

• Manufacturer Part Number: BFP 405 H6433
• Description: RF Bipolar Small Signal RF BIP TRANSISTORS
• Manufacturer: Infineon Technologies

Specifications of BFP 405 H6433

• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 75 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Other names: BFP405H6433XT

Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
C
C
For calculation of R
CE
CB
EB
= 1 mA, I
= 5 mA, V
= 0.5 V, I
= 15 V, V
= 5 V, I
B
E
CE
= 0
C
= 0
BE
= 0
= 4 V, pulse measured
thJA
= 0
please refer to Application Note Thermal Resistance
1)
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
R
CES
CBO
EBO
FE
(BR)CEO
thJS
min.
4.5
60
-
-
-
Values
Value
≤ 555
typ.
95
5
-
-
-
max.
2009-11-06
100
130
10
1
-
BFP405
Unit
V
µA
nA
µA
-
Unit
K/W