BFP 405 H6433 Infineon Technologies, BFP 405 H6433 Datasheet - Page 3

• Manufacturer Part Number: BFP 405 H6433
• Description: RF Bipolar Small Signal RF BIP TRANSISTORS
• Manufacturer: Infineon Technologies

Specifications of BFP 405 H6433

• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 75 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Other names: BFP405H6433XT

1
2
Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
Power gain, maximum stable
I
Z
Insertion power gain
V
Z
Third order intercept point at output
V
Z
1dB Compression point at output
I
f = 1.8 GHz
C
C
C
C
G ms = | S 21 / S 12 |
IP3 value depends on termination of all intermodulation frequency components.
L
S
S
CB
CE
EB
CE
CE
= 10 mA, V
= 2 mA, V
= 5 mA, V
= 5 mA, V
= Z
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, I
= 2 V, I
Lopt
L
L
= 50 Ω
= 50 Ω
, f = 1.8 GHz
C
C
CE
CE
CE
CE
= 5 mA, f = 1.8 GHz,
= 5 mA, f = 1.8 GHz,
= 2 V, f = 1.8 GHz, Z
= 2 V, Z
= 2 V, Z
= 3 V, f = 2 GHz
BE
BE
S
S
CB
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
1)
Sopt
L
= 50 Ω ,
A
,
= 25°C, unless otherwise specified
2)
S
= Z
Sopt
3
Symbol
f
C
C
C
F
G
|S
IP
P
T
-1dB
cb
ce
eb
ms
21
3
|
2
min.
18
14
-
-
-
-
-
-
-
Values
18.5
0.05
0.24
0.29
1.25
typ.
25
23
15
5
2009-11-06
max.
0.1
-
-
-
-
-
-
-
-
BFP405
Unit
GHz
pF
dB
dB
dBm