BFP 410 H6327 Infineon Technologies, BFP 410 H6327 Datasheet
BFP 410 H6327
Specifications of BFP 410 H6327
Related parts for BFP 410 H6327
BFP 410 H6327 Summary of contents
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NPN Silicon RF Transistor • Low current device suitable e.g. for handhelds • For high frequency oscillators e.g. DRO for LNB • For ISM band applications like Automatic Meter Reading, Sensors etc. • Transit frequency GHz T ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA GHz C CE Collector-base capacitance MHz ...
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Total power dissipation P tot 180 mW 140 120 100 100 = ƒ (I Transition frequency GHz V = parameter GHz ...
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Power gain parameter in GHz Noise figure F = ...
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Collector current 0.2 0.4 0.6 0.8 = ƒ current gain ...
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Package Outline +0.1 0.3 -0.05 4x 0.1 M Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 4 ...
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... For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. ...