BFP 410 H6327 Infineon Technologies, BFP 410 H6327 Datasheet - Page 4

• Manufacturer Part Number: BFP 410 H6327
• Description: RF Bipolar Small Signal RF BIP TRANSISTORS
• Manufacturer: Infineon Technologies

Specifications of BFP 410 H6327

• Dc Collector/base Gain Hfe Min: 60
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25 GHz
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 40 mA
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-343
• Other names: BFP410H6327XT

Total power dissipation P
Transition frequency f
f = 2 GHz
V
CE
mW
GHz
180
140
120
100
= parameter in V
80
60
40
20
26
22
20
18
16
14
12
10
0
8
6
4
2
0
0
20
4
40
8
60
12
T
80
16
= ƒ (I
tot
100
20
C
= ƒ (T
)
120
24
3 to 4V
2V
1V
0.5V
S
°C
mA
)
T
I
C
S
160
32
4
Collector-base capacitance C
f = 1MHz
Power gain G
V
CE
0.15
0.05
pF
dB
0.3
0.2
0.1
= 2 V, I
45
35
30
25
20
15
10
0
5
0
0
0
0.5
C
Gms
|S21|²
2
= 13 mA
ma
1
, G
1.5
ms
4
, |S
2
21
6
2.5
|
2
2010-04-09
Gma
= ƒ (f)
cb
3
GHz
= ƒ (V
BFP410
V
V
f
CB
CB
10
4
)