BF 771 E6765N Infineon Technologies, BF 771 E6765N Datasheet - Page 2

• Manufacturer Part Number: BF 771 E6765N
• Description: RF Bipolar Small Signal RF BIP TRANSISTORS
• Manufacturer: Infineon Technologies

Specifications of BF 771 E6765N

• Dc Collector/base Gain Hfe Min: 70
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8 GHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 80 mA
• Power Dissipation: 580 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Other names: BF771E6765NXT

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain-
I
C
C
CE
CB
EB
= 1 mA, I
= 30 mA, V
= 1 V, I
= 20 V, V
= 10 V, I
B
C
E
= 0
= 0
CE
BE
= 0
= 8 V, pulse measured
= 0
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
CES
CBO
EBO
FE
(BR)CEO
min.
12
70
-
-
-
Values
typ.
100
-
-
-
-
max.
100
100
140
1
2007-04-20
-
BF771
Unit
V
µA
nA
µA
-