BF 771 E6765N Infineon Technologies, BF 771 E6765N Datasheet - Page 3

• Manufacturer Part Number: BF 771 E6765N
• Description: RF Bipolar Small Signal RF BIP TRANSISTORS
• Manufacturer: Infineon Technologies

Specifications of BF 771 E6765N

• Dc Collector/base Gain Hfe Min: 70
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Maximum Operating Frequency: 8 GHz
• Collector- Emitter Voltage Vceo Max: 12 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 80 mA
• Power Dissipation: 580 mW
• Maximum Operating Temperature: + 150 C
• Package / Case: SOT-23
• Other names: BF771E6765NXT

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 900 MHz
I
f = 1.8 GHz
Power gain, maximum available
I
Z
I
Z
Transducer gain
I
f = 900 MHz
I
f = 1.8 GHz
1
C
C
C
C
C
C
C
G
L
L
CB
CE
EB
ma
= 50 mA, V
= 10 mA, V
= 10 mA, V
= 30 mA, V
= 30 mA, V
= 30 mA, V
= 30 mA, V
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= | S
Lopt
Lopt
21
/ S
, f = 900 MHz
, f = 1.8 GHz
12
CE
CE
CE
CE
CE
CE
CE
| (k-(k²-1)
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
1/2 )
BE
BE
S
S
S
S
S
S
CB
= Z
= Z
= Z
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt
Sopt
Sopt
L
L
A
= 50
= 50
1)
= 25°C, unless otherwise specified
,
,
,
,
,
,
3
Symbol
f
C
C
C
F
G
|S
T
cb
ce
eb
ma
21e
|
2
min.
6
-
-
-
-
-
-
-
-
-
Values
0.66
0.28
2.25
typ.
1.6
7.5
13
15
10
8
1
max.
1
2007-04-20
-
-
-
-
-
-
-
-
-
BF771
Unit
GHz
pF
dB
dB