TGF2961-SD-T/R TriQuint, TGF2961-SD-T/R Datasheet - Page 5

• Manufacturer Part Number: TGF2961-SD-T/R
• Description: RF GaAs DC-4Hz 1 Watt HFET
• Manufacturer: TriQuint

Specifications of TGF2961-SD-T/R

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1061560

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Maximum Power Dissipation
Thermal Resistance, θjc
Thermal Resistance, θjc
Mounting Temperature
Storage Temperature
Under RF Drive
For a median life of 8.7E6 hours, Power Dissipation is limited to
Channel operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that channel temperatures be maintained at the lowest possible
levels.
Parameter
TriQuint Semiconductor: www. triquint.com [phone] Fax [phone] [e-mail]
Pd(max) = (175°C – Tbase°C) / θjc
Power Dissipation and Thermal Properties
Power De-Rating Curve
Tbaseplate = 70°C
Vd = 8 V
Id = 200 mA
Pd = 1.6 W
Tbaseplate = 85°C
Vd = 8 V
Id = 260 mA
Pout = 30 dBm
Pd = 1.08 W
Tbaseplate = 85°C
Test Conditions
See ‘Typical Solder Reflow Profiles’ Table
Table IV
September 2010 © Rev B
Tm = 1.86E+08 Hrs
Tm = 2.27E+09 Hrs
Tm = 8.7E+06 Hrs
Tchannel = 175°C
Tchannel = 147°C
Tchannel = 127°C
θjc = 39 (°C/W)
θjc = 39 (°C/W)
-65 to 150°C
Pd = 2.7 W
Value
TGF2961-SD
Notes
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