NE334S01-T1 NEC, NE334S01-T1 Datasheet - Page 2
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NE334S01-T1
Manufacturer Part Number
NE334S01-T1
Description
RF GaAs Low Noise HJ FET
Manufacturer
NEC
Datasheet
1.NE334S01.pdf
(6 pages)
Specifications of NE334S01-T1
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
85 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
80 mA
Power Dissipation
300 mW
Package / Case
SO-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE334S01-T1
Manufacturer:
NEC
Quantity:
20 000
ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these conditions may result
TYPICAL PERFORMANCE CURVES
SYMBOLS
in permanent damage.
T
V
V
T
I
P
STG
DS
CH
DS
GS
T
500
100
400
300
200
100
60
20
80
40
0
0
-2.0
TOTAL POWER DISSIPATION vs.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Channel Temperature
Storage Temperature
Total Power Dissipation
Gate to Source Voltage, V
GATE TO SOURCE VOLTAGE
Ambient Temperature, T
AMBIENT TEMPERATURE
PARAMETERS
50
DRAIN CURRENT vs.
100
-1.0
150
A
UNITS
V
GS
200
DS
mW
mA
( C)
V
V
C
C
= 2 V
(V)
1
250
-65 to +125
0
(T
RATINGS
A
I
-3.0
125
300
= 25 C)
4.0
DSS
(T
A
= 25 C)
TYPICAL NOISE PARAMETERS
V
TYPICAL CONSTANT NOISE FIGURE
CIRCLE
DS
FREQ.
(GHz)
= 2 V, I
10
12
14
16
18
2
4
6
8
0
DS
-0.5
100
(V
80
60
40
20
0.5
= 15 mA
0
DS
NF
(dB)
0.23
0.25
0.28
0.31
0.38
0.48
0.60
0.73
0.88
= 2 V, I
MIN
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
1
DRAIN CURRENT vs.
DS
(dB)
17.0
16.0
14.7
13.6
12.5
11.5
10.5
G
9.6
8.8
= 15 mA, f = 4 GHz)
A
-1.0
2
1.0
0.8 dB
MAG
0.77
0.58
0.43
0.32
0.27
0.27
0.34
0.48
0.69
0.6 dB
opt
0.4 dB
3
OPT
-2.0
DS
ANG
4
-139
-100
127
175
V
-70
-56
-0.2 V
15
43
82
-0.4 V
-0.6 V
2.0
GS
(V)
= 0 V
(T
A
5
= 25 C)
Rn/50
0.19
0.18
0.13
0.08
0.07
0.10
0.17
0.29
0.46