UPA806T NEC, UPA806T Datasheet

UPA806T

Manufacturer Part Number

UPA806T

Description

RF Bipolar Small Signal NPN High Frequency

Manufacturer

NEC

Datasheet

1.UPA806T-A.pdf (10 pages)

Specifications of UPA806T

Configuration

Single

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

UPA806T-T1-A

Manufacturer:

RENESAS/瑞萨

Quantity:

20 000

Current page: 1 of 10
Download datasheet (192Kb)

ELECTRICAL CHARACTERISTICS

Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

FEATURES

DESCRIPTION

NEC's UPA806T is two NPN high frequency silicon epitaxial

transistors encapsulated in an ultra small 6 pin SMT package.

Each transistor is independently mounted and easily config-

ured for either dual transistor or cascode operation. The high

various hand-held wireless applications.

• SMALL PACKAGE STYLE:

• LOW NOISE FIGURE:

• HIGH GAIN:

• HIGH GAIN BANDWIDTH: f

• EXCELLENT LOW VOLTAGE, LOW CURRENT

SYMBOLS

, low voltage bias and small size make this device suited for

FE1

2 NE685 Die in a 2 mm x 1.25 mm package

NF = 1.5 dB TYP at 2 GHz

PERFORMANCE

Cre

CBO

EBO

21E

FE 1

21E

2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

For Tape and Reel version use part number UPA806T-T1, 3K per reel.

FE2

= 8.5 dB TYP at 2 GHz

Collector Cutoff Current at V

Emitter Cutoff Current at V

Forward Current Gain at V

Gain Bandwidth at V

Feedback Capacitance at V

Insertion Power Gain at V

Noise Figure at V

Ratio:

PARAMETERS AND CONDITIONS

FE1

FE2

PACKAGE OUTLINE

= Smaller Value of Q

= Larger Value of Q

PART NUMBER

= 3 V, I

= 12 GHz

= 3 V, I

= 3 mA, f = 2 GHz

= 1 V, I

= 3 V, I

FREQUENCY TRANSISTOR

= 3 V, I

= 5 V, I

= 10 mA, f = 2 GHz

or Q

, or Q

= 10 mA, f = 2 GHz

= 10 mA

= 0

= 0, f = 1 MHz

= 0

= 25°C)

NPN SILICON HIGH

UNITS

GHz

µA

2.0 ± 0.2

PIN OUT

1. Collector Transistor 1

2. Emitter Transistor 1

3. Collector Transistor 2

4. Emitter Transistor 2

5. Base Transistor 2

6. Base Transistor 1

Note:

Pin 3 is identified with a circle on the bottom of the package.

OUTLINE DIMENSIONS

0.9 ± 0.1

1.3

0.7

0.65

California Eastern Laboratories

0.85

MIN

PACKAGE OUTLINE S06

(Top View)

2.1 ± 0.1

1.25 ± 0.1

0 ~ 0.1

UPA806T

TYP

S06

100

0.4

8.5

1.5

(Units in mm)

UPA806T

0.2 (All Leads)

0.15

MAX

150

0.1

0.7

2.5

+0.10

- 0.05

Related parts for UPA806T

UPA806T Summary of contents

Page 1

... FE2 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA806T-T1, 3K per reel. NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS 2.0 ± ...

Page 2

... GHz 0 Collector Current, lc (mA) Q1 NOISE FIGURE vs. COLLECTOR CURRENT 0 Collector Current, lc (mA) ORDERING INFORMATION 25°C) A UNITS RATINGS PART NUMBER V 9 UPA806T-T1 110 mW 200 150 °C -65 to +150 ° GHz 20 50 QUANTITY PACKAGING 3000 Tape & Reel COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 500 µA 50 400 µ ...

Page 3

TYPICAL PERFORMANCE CURVES GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 0 Collector Current, lc (mA) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2 elements in total 200 Q1 ...

Page 4

... UPA806T(Q2 FREQUENCY S 11 (GHz) MAG ANG 0.50 0.899 -34.10 0.60 0.856 -41.10 0.80 0.783 -54.00 1.00 0.717 -65.70 1 ...

Page 5

... UPA806T MAG ANG 0.710 -34.60 0.533 0.664 -36.80 0.617 0.587 -40.90 0.744 0.529 -44.70 0.837 0.485 -48.20 0.901 0.451 -51 ...

Page 6

... UPA806T(Q2 FREQUENCY S 11 (GHz) MAG ANG 0.50 0.348 -77.00 0.60 0.297 -82.40 0.80 0.218 -95.00 1.00 0.165 -110.00 1 ...

Page 7

... UPA806T MAG ANG 0.589 -35.80 0.744 0.554 -36.70 0.807 0.496 -38.80 0.898 0.453 -41.10 0.959 0.421 -43.70 0.999 0.398 -46 ...

Page 8

NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS Parameters Q1 & Q2 Parameters IS 7e-16 MJC BF 109 XCJC NF 1 CJS VAF 15 VJS IKF 0.19 MJS ISE 7.9e- 2. XTF NR 1.08 VTF VAR 12.4 ...

Page 9

... Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale ...

Page 10

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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