BLS3135-65 TRAY NXP Semiconductors, BLS3135-65 TRAY Datasheet - Page 4

• Manufacturer Part Number: BLS3135-65 TRAY
• Description: RF Bipolar Power BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of BLS3135-65 TRAY

• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 200000 mW
• Package / Case: SOT-422
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS3135-65,114

Philips Semiconductors
1999 Aug 16
handbook, halfpage
handbook, halfpage
Microwave power transistor
V
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
Fig.2
V
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
Fig.4
CB
CB
(W)
(%)
100
P L
= 40 V; class-C; t
= 40 V; class-C; t
80
60
40
20
50
40
30
20
10
C
0
0
4
0
Load power as a function of the drive power;
typical values.
Collector efficiency as a function of load
power; typical values.
20
6
p
p
= 100 s;
= 100 s;
40
8
= 10%.
= 10%.
60
10
(3)
80
P D (W)
(2)
P L (W)
MCD750
MCD752
(1)
(1)
(2)
(3)
100
12
4
handbook, halfpage
V
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
Fig.3
CB
(dB)
G p
= 40 V; class-C; t
10
8
6
4
2
0
0
Power gain as a function of load power;
typical values.
20
p
= 100 s;
40
= 10%.
60
BLS3135-65
Product specification
(3)
80
(2)
P L (W)
MCD751
(1)
100