BLS3135-65 TRAY NXP Semiconductors, BLS3135-65 TRAY Datasheet - Page 6

• Manufacturer Part Number: BLS3135-65 TRAY
• Description: RF Bipolar Power BULKTR TNS-MICL
• Manufacturer: NXP Semiconductors

Specifications of BLS3135-65 TRAY

• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 75 V
• Emitter- Base Voltage Vebo: 2 V
• Power Dissipation: 200000 mW
• Package / Case: SOT-422
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLS3135-65,114

Philips Semiconductors
1999 Aug 16
handbook, full pagewidth
Microwave power transistor
Dimensions in mm.
The components are located on one side of the copper-clad printed circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
The striplines are on double-clad printed-circuit board with Duroid dielectric (
input
Fig.9
Component layout for 3.1 to 3.5 GHz class-C test circuit.
30
6
r
= 2.2); thickness = 0.38 mm.
30
MCD757
output
40
BLS3135-65
Product specification