BF1214 T/R NXP Semiconductors, BF1214 T/R Datasheet - Page 12

• Manufacturer Part Number: BF1214 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1214 T/R

• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1214,115

NXP Semiconductors
BF1214_1
Product data sheet
Fig 17. Amplifier B: typical gain reduction as a function
Fig 19. Amplifier B: typical drain current as a function of gain reduction; typical values
reduction
gain
(dB)
10
20
30
40
50
0
V
R
see
of the AGC voltage; typical values
V
0
DS(B)
DS(B)
G1(B)
Figure
= 5 V; V
= 5 V; V
= 68 k ; f
8.3 Graphs for amplifier B
24.
1
GG
GG
w
= 5 V; I
= 5 V; V
= 50 MHz; T
2
D(nom)(B)
G2-S(nom)
(mA)
amb
I
D
30
20
10
= 18 mA;
0
= 25 C;
3
= 4 V; R
0
V
001aah008
AGC
(V)
G1(B)
10
Rev. 01 — 30 October 2007
4
= 68 k ; I
20
D(nom)(B)
Fig 18. Amplifier B: unwanted voltage for 1 %
30
(dBmV)
V
unw
= 18 mA; f
110
100
90
80
gain reduction (dB)
V
R
I
cross modulation as a function of gain
reduction; typical values
D(nom)(B)
0
DS(B)
G1(B)
40
001aah010
= 5 V; V
= 68 k ; f
w
= 50 MHz; T
= 18 mA; T
10
50
Dual N-channel dual gate MOSFET
GG
w
= 5 V; V
= 50 MHz; f
20
amb
amb
= 25 C; see
= 25 C; see
G2-S(nom)
30
unw
= 60 MHz;
gain reduction (dB)
= 4 V;
© NXP B.V. 2007. All rights reserved.
40
Figure
001aah009
Figure
BF1214
24.
24.
50
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