BF1214 T/R NXP Semiconductors, BF1214 T/R Datasheet - Page 16

• Manufacturer Part Number: BF1214 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1214 T/R

• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: UMT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1214,115

NXP Semiconductors
11. Abbreviations
12. Revision history
Table 14.
BF1214_1
Product data sheet
Document ID
BF1214_1
Revision history
Table 13.
Acronym
AGC
DC
MOSFET
UHF
VHF
Release date
20071030
Abbreviations
Description
Automatic Gain Control
Direct Current
Metal-Oxide-Semiconductor Field-Effect Transistor
Ultra High Frequency
Very High Frequency
Data sheet status
Product data sheet
Rev. 01 — 30 October 2007
Change notice
-
Dual N-channel dual gate MOSFET
Supersedes
-
© NXP B.V. 2007. All rights reserved.
BF1214
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