BFG520/X T/R NXP Semiconductors, BFG520/X T/R Datasheet - Page 2

• Manufacturer Part Number: BFG520/X T/R
• Description: RF Bipolar Small Signal TAPE7 TNS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BFG520/X T/R

• Dc Collector/base Gain Hfe Min: 60
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.07 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-143
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFG520/X,215

NXP Semiconductors
FEATURES
DESCRIPTION
NPN silicon planar epitaxial
transistors, intended for applications
in the RF frontend in the GHz range,
such as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, pagers and satellite TV
tuners (SATV) and repeater
amplifiers in fibre-optic systems.
The transistors are encapsulated in
4-pin, dual-emitter plastic SOT143
and SOT143R envelopes.
QUICK REFERENCE DATA
V
V
I
P
h
C
f
G
F
c
T
S
FE
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
SYMBOL
CBO
CEO
tot
re
NPN 9 GHz wideband transistor
UM
21
2
collector-base voltage
collector-emitter voltage open base
DC collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
noise figure
PARAMETER
PINNING
open emitter
up to T
I
I
I
T
I
T
I
T
I
T
f = 900 MHz; T
f = 900 MHz; T
f = 2 GHz; T
C
C
C
C
C
C
amb
amb
amb
amb
s
s
s
= 20 mA; V
= 0; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
= 20 mA; V
=
=
=
PIN
BFG520/XR (Fig.2) Code: %MP
BFG520/X (Fig.1) Code: %ML
1
2
3
4
1
2
3
4
1
2
3
4
BFG520 (Fig.1) Code: %MF
= 25 C
= 25 C
= 25 C
= 25 C
opt
opt
opt
Rev. 04 - 23 November 2007
s
CB
= 88 C; note 1
; I
; I
; I
collector
base
emitter
emitter
collector
emitter
base
emitter
collector
emitter
base
emitter
c
C
C
= 6 V; f = 1 MHz
amb
CONDITIONS
= 5 mA; V
= 20 mA; V
= 5 mA; V
CE
CE
CE
CE
CE
amb
amb
DESCRIPTION
= 25 C
= 6 V; T
= 6 V; f = 1 GHz;
= 6 V; f = 900 MHz;
= 6 V; f = 2 GHz;
= 6 V; f = 900 MHz;
= 25 C
= 25 C
CE
CE
BFG520; BFG520/X; BFG520/XR
CE
j
= 6 V;
= 25 C
= 8 V;
= 6 V;
fpage
60
17
handbook, 2 columns
MIN.
0.3
9
19
13
18
1.1
1.6
1.9
120
Fig.1 SOT143B.
Fig.2 SOT143R.
3
2
Top view
Top view
1
4
TYP.
Product specification
20
15
70
300
250
1.6
2.1
MAX.
MSB014
3
2
MSB035
2 of 14
4
1
V
V
mA
mW
pF
GHz
dB
dB
dB
dB
dB
dB
UNIT