BLF6G22LS-100 NXP Semiconductors, BLF6G22LS-100 Datasheet - Page 2

• Manufacturer Part Number: BLF6G22LS-100
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-100

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22LS-100,112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G22LS-100
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLF6G22LS-100 -
Symbol
V
V
I
T
Symbol
R
T
D
stg
j
DS
GS
th(j-case)
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
Connected to flange.
Parameter
thermal resistance from junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
Rev. 3 — 12 November 2010
Description
earless flanged LDMOST ceramic package; 2 leads
Conditions
[1]
Simplified outline
Conditions
T
case
BLF6G22LS-100
= 80 °C; P
1
2
3
Power LDMOS transistor
L
= 25 W
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
2
Max
65
+13
29
+150
225
sym112
Typ
0.43 K/W
Version
SOT502B
1
3
2 of 12
Unit
Unit
V
V
A
°C
°C