BLF6G22LS-100 NXP Semiconductors, BLF6G22LS-100 Datasheet - Page 9

• Manufacturer Part Number: BLF6G22LS-100
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-100

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22LS-100,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF6G22LS-100
Product data sheet
Document ID
BLF6G22LS-100 v.3
Modifications:
BLF6G22LS-100 v.2
BLF6G22LS-100 v.1
Revision history
Table 9.
Acronym
3GPP
CCDF
CW
DPCH
LDMOS
LDMOST
PAR
PDPCH
RF
VSWR
W-CDMA
20100331
20080218
Release date
20101112
•
Table
Abbreviations
6: correction: C_rs condition f = 91 MHz to f = 1 MHz
All information provided in this document is subject to legal disclaimers.
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
Data sheet status
Product data sheet
Product data sheet
Preliminary data sheet
Rev. 3 — 12 November 2010
Change notice
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-
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BLF6G22LS-100
Power LDMOS transistor
Supersedes
BLF6G22LS-100 v.2
BLF6G22LS-100 v.1
-
© NXP B.V. 2010. All rights reserved.
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