BLF6G20-110 NXP Semiconductors, BLF6G20-110 Datasheet - Page 4

• Manufacturer Part Number: BLF6G20-110
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-110

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.16 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 29 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20-110,112

NXP Semiconductors
BLF6G20-110_BLF6G20LS-110_3
Product data sheet
Fig 2.
(dB)
G
p
22
20
18
16
14
0
V
Two-tone CW power gain and drain efficiency
as function of peak envelope load power;
typical values
DS
= 30 V; I
20
7.2 One-tone CW
7.3 Two-tone CW
Dq
= 1400 mA; f = 1960 MHz.
40
Fig 1.
60
V
One-tone CW power gain and drain efficiency as function of load power;
typical values
DS
= 30 V; I
G
D
p
80
P
L(PEP)
001aaj073
Dq
(dB)
(W)
Rev. 03 — 13 January 2009
G
= 1400 mA; f = 1960 MHz.
100
BLF6G20-110; BLF6G20LS-110
p
22
20
18
16
14
60
45
30
15
0
(%)
0
D
20
Fig 3.
40
IMD3
(dBc)
10
30
50
70
60
0
V
Two-tone CW intermodulation distortion as a
function of peak envelope load power; typical
values
DS
80
= 30 V; I
G
20
D
p
100
Dq
= 1400 mA; f = 1960 MHz.
P
120
001aaj072
40
L(PEP)
140
(W)
Power LDMOS transistor
60
45
30
15
0
60
(%)
D
IMD3
IMD5
IMD7
© NXP B.V. 2009. All rights reserved.
80
P
L(PEP)
001aaj074
(W)
100
4 of 10