BLF6G20-180RN,112 NXP Semiconductors, BLF6G20-180RN,112 Datasheet
BLF6G20-180RN,112
Specifications of BLF6G20-180RN,112
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BLF6G20-180RN,112 Summary of contents
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... BLF6G20-180RN; BLF6G20LS-180RN Power LDMOS transistor Rev. 01 — 17 November 2008 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier WCDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 0.01 % probability on CCDF per carrier; ...
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... MHz to 2000 MHz frequency range 2. Pinning information Table 2. Pin BLF6G20-180RN (SOT502A BLF6G20LS-180RN (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G20-180RN BLF6G20LS-180RN - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF6G20-180RN_20LS-180RN_1 Product data sheet Pinning ...
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... Symbol P L(AV IMD3 ACPR 7.1 Ruggedness in class-AB operation The BLF6G20-180RN and BLF6G20LS-180RN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G20-180RN_20LS-180RN_1 Product data sheet Thermal characteristics Parameter Conditions thermal resistance from T case junction to case ...
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... 1400 mA 1960 MHz One-tone CW power gain and drain efficiency as function of load power; typical values 001aai652 50 D IMD (%) (dBc 120 180 P (W) L(PEP) Fig 3. Rev. 01 — 17 November 2008 BLF6G20(LS)-180RN Power LDMOS transistor 001aai651 50 D (%) 120 180 P ( 120 P L(PEP 1400 mA 1960 MHz. ...
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... P (W) L(AV) Fig C11 C10 The drawing is not to scale. Test circuit for operation at 2000 MHz Rev. 01 — 17 November 2008 BLF6G20(LS)-180RN Power LDMOS transistor 30 35 IMD3 40 45 ACPR L(AV 1400 mA 1960 MHz ( 5 MHz carrier spacing 10 MHz. 2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as function of average load power ...
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... Value 1.9 pF 2.0 pF 0 220 nF 100 1.0 pF 0 220 Rev. 01 — 17 November 2008 BLF6G20(LS)-180RN Power LDMOS transistor C21 C17 C16 C18 C12 C13 C14 C15 C20 C19 C22 = 3.5 and thickness = 0.76 mm. r Remarks [1] ATC 100B or capacitor of same quality ...
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... SMD resistor [1] Solder vertically. BLF6G20-180RN_20LS-180RN_1 Product data sheet Figure 6 and Figure 7) …continued Value - 2.7 6.8 Rev. 01 — 17 November 2008 BLF6G20(LS)-180RN Power LDMOS transistor = 3.5 and thickness = 0.76 mm. r Remarks Ferroxcube BDS 3/3/4.6-4S2 or equivalent © NXP B.V. 2008. All rights reserved ...
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... REFERENCES JEDEC JEITA Rev. 01 — 17 November 2008 BLF6G20(LS)-180RN Power LDMOS transistor 3.38 1.70 34.16 9.91 27.94 0.25 3 ...
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... REFERENCES JEDEC JEITA Rev. 01 — 17 November 2008 BLF6G20(LS)-180RN Power LDMOS transistor 1.70 20.70 9.91 0.25 1.45 20.45 9.65 0.067 0.815 0.390 0.010 0.057 ...
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... Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access Release date Data sheet status 20081117 Product data sheet Rev. 01 — 17 November 2008 BLF6G20(LS)-180RN Power LDMOS transistor Change notice - © NXP B.V. 2008. All rights reserved. Supersedes - ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 17 November 2008 BLF6G20(LS)-180RN Power LDMOS transistor © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G20-180RN_20LS-180RN_1 All rights reserved. Date of release: 17 November 2008 ...