BLF6G38-25 NXP Semiconductors, BLF6G38-25 Datasheet - Page 2

• Manufacturer Part Number: BLF6G38-25
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-25

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.58 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 2.1 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38-25,112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G38-25_BLF6G38S-25_2
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
BLF6G38-25 (SOT608A)
1
2
3
BLF6G38S-25 (SOT608B)
1
2
3
Type number
BLF6G38-25
BLF6G38S-25
Symbol
V
V
I
T
T
Symbol
R
D
stg
j
DS
GS
th(j-case)
Connected to flange.
Parameter
thermal resistance from
junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
Package
Name
-
-
Rev. 02 — 23 December 2008
Description
flanged ceramic package; 2 mounting holes; 2 leads
ceramic earless flanged package; 2 leads
BLF6G38-25; BLF6G38S-25
Conditions
T
P
case
L
= 25 W
Conditions
= 80 C;
[1]
[1]
Simplified outline
Type
BLF6G38-25
BLF6G38S-25
WiMAX power LDMOS transistor
2
1
2
1
3
3
Min
-
-
-
0.5
65
Typ
1.8
1.8
Graphic symbol
© NXP B.V. 2008. All rights reserved.
Max
65
+13
8.2
+150
200
Max
-
-
2
2
sym112
sym112
Version
SOT608A
SOT608B
1
3
1
3
Unit
V
V
A
C
C
2 of 13
Unit
K/W
K/W