BLF6G38-25 NXP Semiconductors, BLF6G38-25 Datasheet - Page 5

• Manufacturer Part Number: BLF6G38-25
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-25

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.58 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 2.1 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38-25,112

NXP Semiconductors
BLF6G38-25_BLF6G38S-25_2
Product data sheet
Fig 3.
Fig 4.
(dB)
G
(1) Low frequency component
(2) High frequency component
p
17
16
15
14
13
12
3400
V
n = 28 / 25; G = 1 / 8; FFT = 1024; zone type = PUSC; number of symbols = 46; number of subchannels = 30.
Adjacent channel power ratio as function of average load power; typical values
P
Power gain and drain efficiency as functions of
frequency; typical values
DS
L(AV)
= 28 V; I
= 4.5 W.
7.3.1 Graphs
7.3 Single carrier N-CDMA broadband performance at 9 W average
3450
Dq
= 225 mA; f = 3500 MHz; OFDMA signal; frame duration = 5 ms; bandwidth = 10 MHz; frequency band = WCS;
G
D
p
3500
ACPR
(dBc)
17
29
41
53
65
3550
10
1
f (MHz)
001aah597
Rev. 02 — 23 December 2008
3600
27
26
25
24
23
22
(2)
(1)
(1)
(2)
(%)
1
D
BLF6G38-25; BLF6G38S-25
Fig 5.
ACPR
(dBc)
10
(1) Low frequency component
(2) High frequency component
40
50
60
70
(2)
(1)
3400
P
ACPR
ACPR
ACPR
L(AV)
V
N-CDMA; PAR = 9.7 dB at 0.01 % probability;
IBW = 30 kHz.
Adjacent channel power ratio as function of
frequency; typical values
DS
001aah596
= 28 V; I
(W)
10M
20M
30M
(1)
(2)
(1)
(2)
(2)
(1)
10
3450
2
Dq
WiMAX power LDMOS transistor
= 350 mA; P
ACPR
ACPR
ACPR
3500
1500k
1980k
885k
L(AV)
3550
= 4.5 W; single carrier
© NXP B.V. 2008. All rights reserved.
f (MHz)
001aah598
3600
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