BLF6G20-45 NXP Semiconductors, BLF6G20-45 Datasheet - Page 6

• Manufacturer Part Number: BLF6G20-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20-45,112

NXP Semiconductors
BLF6G20-45_BLF6G20S-45_2
Product data sheet
Fig 7.
Striplines are on a double copper-clad Rogers Duroid 5880 Printed-Circuit Board (PCB) (
See
Component layout for 1805 MHz and 1880 MHz test circuit
C4
Table 8
C3
C5
R1 C6
for list of components.
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Rev. 02 — 25 August 2008
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BLF6G20-45; BLF6G20S-45
r
= 2.2), thickness = 0.79 mm.
C8 C10
C9
Power LDMOS transistor
C11
C7
C14
C12
© NXP B.V. 2008. All rights reserved.
C15
C13
001aah551
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