BF1207 T/R NXP Semiconductors, BF1207 T/R Datasheet - Page 15

• Manufacturer Part Number: BF1207 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1207 T/R

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1207,115

Philips Semiconductors
9397 750 14955
Product data sheet
Fig 22. Amplifier B: unwanted voltage for 1 %
Fig 24. Amplifier B: drain current as a function of gain reduction; typical values
(dB V)
V
unw
120
110
100
90
80
V
R
f
cross-modulation as a function of gain
reduction; typical values
V
Figure
unw
0
DS(B)
DS(B)
G1(B)
= 60 MHz; T
= 5 V; V
= 5 V; V
= 150 k (connected to V
30.
GG
GG
20
amb
= 5 V; V
= 5 V; V
= 25 C; see
DS(A)
DS(A)
(mA)
40
gain reduction (dB)
I
= V
= V
D
GG
20
16
12
Figure
8
4
0
G1-S(A)
G1-S(A)
); f
0
w
001aac900
= 50 MHz;
30.
= 0 V;
= 0 V; R
60
Rev. 01 — 28 July 2005
G1(B)
20
= 150 k (connected to V
Fig 23. Amplifier B: typical gain reduction as a function
reduction
gain
(dB)
40
gain reduction (dB)
10
20
30
40
50
0
V
R
T
of AGC voltage; typical values
0
amb
DS(B)
G1(B)
001aac902
= 25 C; see
= 5 V; V
= 150 k (connected to V
GG
60
1
Dual N-channel dual gate MOSFET
); f = 50 MHz; T
GG
= 5 V; V
Figure
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
2
30.
DS(A)
amb
= V
GG
= 25 C; see
G1-S(A)
3
); f = 50 MHz;
V
001aac901
AGC
BF1207
= 0 V;
(V)
4
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