BF1207 T/R NXP Semiconductors, BF1207 T/R Datasheet - Page 5

• Manufacturer Part Number: BF1207 T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF1207 T/R

• Configuration: Dual Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 180 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SC-88
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF1207,115

Philips Semiconductors
Table 7:
T
[1]
[2]
9397 750 14955
Product data sheet
Symbol
I
I
G1-S
G2-S
j
Fig 2. Drain currents of MOSFET A and B as function
= 25 C.
R
R
(mA)
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
G1
G1
I
D
20
16
12
connects gate1 (A) to V
connects gate1 (B) to V
8
4
0
V
of V
D(A)
D(A)
D(A)
D(B)
D(B)
D(B)
0
DS(A)
Static characteristics
; R
; R
; R
; R
; R
; R
GG
Parameter
gate1 cut-off current
gate2 cut-off current
(6)
= V
G1
G1
G1
G1
G1
G1
= 47 k .
= 68 k .
= 100 k .
= 100 k .
= 68 k .
= 47 k .
1
DS(B)
(4)
(5)
= 5 V; V
2
GG
GG
G2-S
= 5 V (see
= 0 V (see
= 4 V; T
3
…continued
j
Figure
Figure
= 25 C.
4
001aac742
V
(1)
(2)
(3)
GG
(V)
3).
3).
Conditions
V
V
5
Rev. 01 — 28 July 2005
G2-S
G2-S
amplifier A; V
amplifier B; V
= V
= 4 V; V
DS(A)
Fig 3. Functional diagram
G1-S
= 0 V
G1-S(A)
G1-S(A)
= V
V
V
DS(A)
= 5 V; V
= 0 V; I
GG
GG
= 5 V: amplifier A is on; amplifier B is off.
= 0 V: amplifier A is off; amplifier B is on.
= V
G1B
G1A
G2
D(B)
R
DS(B)
DS(B)
G1
Dual N-channel dual gate MOSFET
= 0 A
= 0 V
= 0 V;
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
V
GG
Min
-
-
-
001aac881
DB
S
DA
Typ
-
-
-
BF1207
Max Unit
50
50
20
5 of 22
nA
nA
nA