NE425S01 NEC, NE425S01 Datasheet
NE425S01
Specifications of NE425S01
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NE425S01 Summary of contents
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... GATE WIDTH: 200 m • LOW COST PLASTIC PACKAGE DESCRIPTION The NE425S01 is a Hetero-Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and other commercial applications. ...
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ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate to Source Voltage GS I Drain Current D I Gate Current G P Total Power Dissipation T T Channel Temperature CH T Storage Temperature stg Note: 1. ...
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TYPICAL COMMON SOURCE SCATTERING PARAMETERS -.2 -.4 -.6 -. FREQUENCY S 11 (GHz) MAG ANG 0.50 0.998 -6.25 ...
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... NE425S01 NONLINEAR MODEL SCHEMATIC GATE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters VTO -0.8 RG VTOSC 0 RD ALPHA 8 RS BETA 0.103 RGMET GAMMA 0.092 KF GAMMADC 0. TNOM DELTA 1 XTI VBI 0.715 EG IS 3e-13 VTOTC N 1.22 BETATCE RIS 0 FFE RID 0 TAU 4e-12 CDS 0.13e-12 RDB ...
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... Bulk NE425S01-T1 Tape & Reel 1000 pcs./reel NE425S01-T1B Tape & Reel 4000 pcs./reel EXCLUSIVE NORTH AMERICAN AGENT FOR CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • ...